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  • Silicon Carbide SBD-650V

    Temperature-Independent
    High-Frequency Operation
    Reverse Breakdown Voltage: 650V 1200V
    Package type: TO220, TO247, TO252......

  • Silicon Carbide SBD-1200V

    Temperature-Independent
    High-Frequency Operation
    Reverse Breakdown Voltage:1200V
    Package type: TO220, TO247, TO252......

  • Silicon Carbide MOSFET

    Higher frequency operation
    Reduction in system cost
    Longer lifetime and higher reliability
    Highest efficiency for reduced cooling effort

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