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Home > Products > IGBT Power Module > Replacing Infineon IGBT > Typical Replacing Infineon IGBT

Typical Replacing Infineon IGBT

High inversion efficiency
High output power density
IC in parallel blanced current
High strength insulation substrate

Product Description

As the leading manufacturer and supplier of IGBT Power Module,Homray Semiconductor Technology's IGBT Module can replacing Infineon IGBT Module FP10R12W1T4,FP25R12KE3,etc. IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.

IGBT Power Module are used in various applications such as AC and DC motor drives, Unregulated Power Supply (UPS), Switch Mode Power Supplies (SMPS), traction motor control and induction heating, inverters, used to combine an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device, etc.



HST Advanced Process For Module Package:
Ultrasonic Metal Welding


Silver Sintering Process


Sintered With Cu Foil & Cu Wire Bonding





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